Czochralski-type samples of n-type material were irradiated with 2MeV electrons at room temperature, and atomic H was introduced from the surface - by wet etching - before or after irradiation. Comparisons of vacancy-related defects before and after H-reaction were made by using high-resolution deep level transient spectroscopy. A deep level appeared, at Ec – 0.311eV, after hydrogenation. It had 2 components. This had previously been reported to be due to VOH or VOH2, and was associated with a decrease in the intensity of the A-centre (VO). The deep level transient spectroscopy showed that the A-centre emission rate was modified by H, and a lower emission rate from the A-centre was observed in the presence of H. Depth profiling showed that a modification occurred in the expected spatial location of the introduced H.

Hydrogen Reactions with Electron Irradiation Damage in Silicon A.R.Peaker, J.H.Evans-Freeman, P.Y.Y.Kan, L.Rubaldo, I.D.Hawkins, K.D.Vernon-Parry, L.Dobaczewski: Physica B, 1999, 273-274, 243-6