Crystals having various contents of 16O, 18O, 12C and 13C were irradiated with 2.5MeV electrons at 30 to 600C. The loss of interstitial O and substitutional C, as well as the associated formation of O- and C-related complexes were monitored by means of infra-red absorption. A marked enhancement of the infra-red bands which were attributed to the O dimer was observed at certain irradiation temperatures in C-poor samples. In C-rich crystals, new infra-red vibrational bands were observed after irradiation at 450 to 550C. The irradiation of C-rich samples at 500 to 600C was found to cause a marked loss of interstitial O and substitutional C, due to the formation of various precipitates. In C-poor samples, there was no significant loss of interstitial O at these temperatures.

Oxygen and Carbon Clustering in Cz-Si during Electron Irradiation at Elevated Temperatures J.L.Lindström, T.Hallberg, J.Hermansson, L.I.Murin, V.P.Markevich, M.Kleverman, B.G.Svensson: Solid State Phenomena, 1999, 69-70, 297-302