Defect annealing in near-degenerate p-type material which had been subjected to electron irradiation at cryogenic temperatures was investigated. A marked difference was observed in the annealing behaviours of defects in material which was doped with B and Ga. It was found that this effect was due mainly to the differing charge states and stability of interstitial impurity ions. When mobile, these ions formed interstitial substitutional ion pairs which were stable at up to 600C.

Electron Irradiation of Heavily Doped Silicon - Group-III Impurity Ion Pairs V.V.Emtsev, P.Ehrhart, D.S.Poloskin, U.Dedek: Physica B, 1999, 273-274, 287-90