An infra-red absorption study was made of the formation and annealing of radiation-induced defects in hydrogenated Czochralski-grown crystals. The H or D was introduced into the crystals by high-temperature in-diffusion from the gas phase. The samples were irradiated with fast electrons, and annealed at temperatures ranging from 100 to 600C. The predominant centres which were produced by irradiation were the same in O+H-doped, and as-grown, samples. These were the A centre, Ci-Oi complex and divacancy. A marked effect of H was seen in the annealing behaviour of the radiation-induced defects. Their disappearance from hydrogenated crystals began at temperatures as low as 100C, and was followed by the creation of a number of new infra-red absorption bands in wave-number ranges which were characteristic of both O- and H-related local vibrational modes. Infra-red absorption lines at 943.5, 2126.4 and 2151.5/cm were attributed to the local vibrational modes of the V-O-H2 complex. These complexes were formed by the interaction of mobile H molecules with A centres.

Interaction of Hydrogen with Radiation-Induced Defects in Cz-Si Crystals V.P.Markevich, L.I.Murin, J.L.Lindström, M.Suezawa: Solid State Phenomena, 1999, 69-70, 403-8