This Letter was concerned with the determination of the transition paths attendant on nanovoid growth in Al under hydrostatic tension. The analysis was, therefore, based upon energy minimization at 0K. The Al was modelled by using the Ercolessi-Adams embedded-atom method, and spurious boundary artefacts were mitigated by the use of the quasi-continuum method. The analysis revealed several stages of pressure build-up separated by yield points. The first yield point corresponds to the formation of highly stable tetrahedral dislocation junctions around the surfaces of the void. The second yield point was caused by the dissolution of the tetrahedral structures and the emission of conventional ½<110>{111} and anomalous ½<110>{001} dislocation loops.

Nanovoid Cavitation by Dislocation Emission in Aluminum. J.Marian, J.Knap, M.Ortiz: Physical Review Letters, 2004, 93[16], 165503 (3pp)