It was noted that the conduction-type of B-doped samples changed from p-type to n-type during irradiation with 1MeV electrons to a fluence of 1017/cm2. From an analysis of the temperature dependence of the electron concentration, the densities and energy levels of the defects which were created by high-fluence irradiation were determined to be 1.5 x 1014/cm3 and Ec - 0.30eV, respectively. The compensated density was 9.5 x 1013/cm3. This value was in agreement with the density of B that acted as an acceptor.

Temperature Dependence of Electron Concentration in Type-Converted Silicon by 1017/cm2 Fluence Irradiation of 1MeV Electrons H.Matsuura, Y.Uchida, N.Nagai, T.Hisamatsu, T.Aburaya, S.Matsuda: Applied Physics Letters, 2000, 76[15], 2092-4