Deep-level transient spectroscopic studies showed that, in electron-irradiated n-type material, the E1 level (O-V complex), E2 level (double negatively charged state of the divacancy) and E3 level (singly charged state of the divacancy) were hardly annealed at 120C, whereas hydrogenation by boiling at 120C (2atm) markedly reduced the concentrations of these levels. A new level emerged near to 0.33eV below the conduction-band edge, after boiling, and was suggested to be a radiation-induced defect-H complex.

Annealing and Hydrogenation Behaviors of Electron-Beam Induced Defects in n-Type Si Y.Ohmura, C.Hayakawa, T.Suzuki, K.Tajima: Japanese Journal of Applied Physics - 1, 1999, 38[7A], 4047-8