An in situ annealing experiment was performed on an intergranular dislocation configuration composed only of glissile grain boundary dislocations observed in a near Σ = 3 {111} grain boundary in copper. Relaxation phenomena were not obvious than those predicted by theoretical models. Upon annealing, glissile intergranular dislocations were shown to overcome dislocation obstacles by node movement leading to a decrease of the total grain boundary energy.

In situ Transmission Electron Microscopy Study of Glissile Grain Boundary Dislocation Relaxation in a Near-Σ = 3 {111} Grain Boundary in Copper. J.P.Couzinié, B.Décamps, L.Boulanger, L.Priester: Materials Science and Engineering A, 2005, 400-401, 264-7