A deep-level transient spectroscopic study was made of the defects which were created by 61MeV proton bombardment of Sn-doped n-type Czochralski material. The main conclusions were that, in Sn-doped material, at least 2 additional deep radiation centers were introduced at 0.29 and 0.61eV below the conduction band. On the basis of annealing experiments, it was concluded that these electron traps dissociated below 120C. It was demonstrated that the introduction rates of well-known radiation defects were significantly lower in Sn-doped material.

Deep Levels in High-Energy Proton-Irradiated Tin-Doped n-Type Czochralski Silicon E.Simoen, C.Claeys, V.B.Neimash, A.Kraitchinskii, N.Krasko, O.Puzenko, A.Blondeel, P.Clauws: Applied Physics Letters, 2000, 76[20], 2838-40