The damage which was introduced by bombardment with high doses (3 x 1016/cm2) of various light or medium ions at high temperatures was studied by using Rutherford back-scattering spectroscopy, cross-sectional transmission electron microscopy and high-resolution X-ray diffraction. The results showed that there was a marked variation in the damage accumulation for the various ion species. In the case of O+ and N+ ions, a distinct layer with a low level of damage producing a negative strain formed at the surface. It was found that the magnitude of the strain was not related to the energy which was deposited in collision cascades. In the cases of Ne+ and Mg+ bombardment, low damage accumulation occurred near to the surface but no negative strain was created. With increasing Ne+ or Mg+ dose (above 1017/cm2), the damage profile stretched almost to the surface. It was suggested that, in addition to the spatial separation of Frenkel pairs which took place in collision cascades, the ability of implanted ions to form precipitates and complexes with Si atoms also affected damage formation during implantation at high temperatures.

Damage Accumulation in Si Crystal during Ion Implantation at Elevated Temperatures - Evidence of Chemical Effects J.P.De Souza, Y.Suprun-Belevich, H.Boudinov, C.A.Cima: Journal of Applied Physics, 2000, 87[12], 8385-8