An investigation was made of the defect structure of 10MeV proton-irradiated Czochralski-grown single crystals. Deep-level transient spectroscopy was used to characterize vacancy interstitials and complex-type defects, and to monitor their evolution during annealing at temperatures of up to 500C. Quite different annealing behaviours of the deep levels were observed for conduction-type converted (n-type) samples which were bombarded to 1014/cm2, as compared with those for samples after an intermediate dose of 3 x 1013/cm2. The observed concentrations of the minority carrier level at Ec - 0.20eV, and of a new electron level at Ec - 0.71eV which could be seen in converted samples, were found to be enough to account for the carrier removal effects. Isochronal thermal annealing after heavy bombardment provided an insight into defect interactions. For instance, the newly observed prominent electron level (Ec - 0.71eV) in type-converted cells exhibited a mutual thermal transformation, with a hole level at Ev + 0.36eV, after annealing.

Evolution of Defect Complexes in Silicon Single Crystals with Heavy Fluence 10MeV Proton Irradiation A.Khan, M.Yamaguchi, T.Hisamatsu, S.Matsuda: Journal of Applied Physics, 2000, 87[5], 2162-8