A study was made of the thermal stability of Fe which was gettered at the projected range as a result of MeV ion implantation-induced dislocation loops in Fe-contaminated Czochralski-type wafers. The binding energy was found to be 0.80eV. It was established that the gettering mechanism in the mid-range region of epitaxial samples, after ion doses of about 5 x 1015/cm2, was vacancy-related.

Gettering at Vacancy and Interstitial-Rich Regions in MeV Ion Implanted Silicon K.L.Beaman, J.M.Glasko, S.V.Koveshnikov, G.A.Rozgonyi: Solid State Phenomena, 1999, 69-70, 247-52