The effect of dose and energy upon post-annealing defect formation, when MeV P was implanted into epitaxially grown material, was studied by means of etching and transmission electron microscopy. The P doses ranged from 1013 to 5 x 1014/cm2, and the energies ranged from 180 to 5000keV. For P energies above 500keV, the threading dislocation density increased sharply, with increasing dose, from below the minimum detection limit (5 x 103/cm2) at a dose of 1013/cm2 to a maximum of more than 106/cm2 at a dose of 1014/cm2. However, with further increases in dose, the threading dislocation density decreased almost to the minimum detection limit. Plan-view transmission electron microscopy suggested that, with increasing dose, the formation of extended defects at the projected range reduced the threading dislocation density. For a fixed dose of 1014/cm2, the threading dislocation density exhibited a super-linear increase of nearly 3 orders of magnitude as the implantation energy was increased from 180 to 2000keV. With further increases in implantation energy, the threading dislocation density saturated at a value of about 2 x 106/cm2. The marked effect of dose and energy upon the threading dislocation density was explained in terms of homogeneous nucleation theory.

Effect of Implantation Energy and Dose on Extended Defect Formation for MeV Phosphorus Implanted Silicon C.Jasper, A.Hoover, K.S.Jones: Applied Physics Letters, 1999, 75[17], 2629-31