Recent results on the deep-level spectrum of material which had been implanted with MeV-ions were reviewed. It was shown that, unlike light-ion (H+, He+) implantation, deep-level defect formation in samples which were implanted with heavier ions (Si+, Ge+) was not completed immediately after implantation. It continued for at least several days at room temperature. New and room-temperature unstable deep-level centres were observed after the low-temperature implantation of heavier ions. The results were explained in terms of intrinsic point defect cluster formation in the collision cascades of heavier ions. Photo-excitation during implantation was found to affect the numbers of vacancies which were stored in these clusters and the concentrations and distributions of stable defects.

In Situ Photoexcitation-Induced Perturbations of Defect Complex Concentration and Distribution in Silicon Implanted with Light and Heavy Ions N.Yarykin, C.R.Cho, R.A.Zuhr, G.A.Rozgonyi: Solid State Phenomena, 1999, 69-70, 397-402