A Raman line of H2 was monitored after Si+ ion-implantation followed by H-atom treatment. The vibrational frequency of the line was 3822/cm, and was thus between the frequencies of 4158 and 3601/cm which had previously been found for H2 in Si. This was confirmed by the observation of isotope shifts to 2770/cm for D2 and to 3353/cm for HD. The ion-fluence dependence of the Raman intensity of H2 at 3822/cm was related to the total intensity of peaks in the Si-H stretching region that were attributed to H-terminated dangling bonds in multivacancies and/or interstitial-H complexes. It was suggested that the H molecule which corresponded to the 3822/cm line was trapped in, or was adjacent to, H-terminated multivacancies.

Hydrogen Molecules Trapped by Multivacancies in Silicon K.Ishioka, M.Kitajima, S.Tateishi, K.Nakanoya, N.Fukata, T.Mori, K.Murakami, S.Hishita: Physical Review B, 1999, 60[15], 10852-4