The light-induced transformation of electron traps in n-type samples which had been implanted with 170keV H to a dose of 2 x 1010/cm2 was studied by using deep level transient spectroscopy. In addition to the usual vacancy-related traps, two H-related traps, E(0.32) and E(0.49), were produced by the H implantation. The concentration of vacancy-related traps decreased with illumination when the photon energy was above the band-gap energy of zero-biased Schottky diodes. The concentration of H-related traps increased. It was suggested that the vacancy-O pair was transformed into the E(0.32) trap by adding H which was liberated from shallow-level H-containing defects. Such H liberation was thought to occur via their induced instability; due to changing their charge-state by electron capture.

Light Illumination-Induced Transformation of Electron Traps in Hydrogen-Implanted n-Type Silicon Y.Tokuda, H.Shimada, A.Ito: Journal of Applied Physics, 1999, 86[10], 5630-5