Following rapid thermal annealing (800 to 1000C, 15s), an In activation which amounted to between 18 and 52% of the implanted dose (5 x 1014/cm2) was obtained in samples which had been co-implanted with C+. It was noted that reverse annealing of the activation occurred at 800 to 900C, that there was an appreciable reduction in In profile redistribution during rapid thermal annealing and that the electrically activated In concentration was considerably higher than the substitutional In concentration. The results were explained in terms of interactions between C atoms and Si self-interstitials, strain compensation between C and In atoms, and the formation of stable substitutional In plus substitutional C centres.

Enhanced Electrical Activation of Indium Co-Implanted with Carbon in a Silicon Substrate H.Boudinov, J.P.De Souza, C.K.Saul: Journal of Applied Physics, 1999, 86[10], 5909-11