Defects in high-energy ion-implanted specimens were investigated, particularly at about 50% of the projected ion range, after annealing at temperatures of between 700 and 1000C. No vacancy-like defects could be detected, by means of variable-energy positron annihilation spectroscopy, after annealing at temperatures above 800C. Interstitial-type defects were observed, at about 50% of the projected ion range, by using cross-sectional transmission electron microscopy. The results indicated the presence of small interstitial agglomerates, at about 50% of the projected ion range, which remained after high-temperature annealing.

Interstitial-Type Defects away from the Projected Ion Range in High-Energy Ion Implanted and Annealed Silicon R.Kögler, A.Peeva, W.Anwand, G.Brauer, W.Skorupa, P.Werner, U.Gösele: Applied Physics Letters, 1999, 75[9], 1279-81