It was recalled that damage was to be found in MeV-ion implanted samples not only at the projected ion range, but also at about 50% of that range after annealing. Such damage could be detected by decorating it with metal atoms, and measuring the metal distribution. No structural defects had previously been seen in the mid-range region. The trapping of Cu atoms in the mid-range region was investigated here as a function of the ion dose and energy. A high concentration of O impurities was found to suppress Cu gettering. No vacancy-like defects could be detected by means of positron annihilation spectroscopy after annealing at temperatures above 850C. Interstitial-type defects were observed at the mid-range region by using cross-sectional transmission electron microscopy.

Gettering Centres for Metals and Oxygen Formed in MeV-Ion-Implanted and Annealed Silicon R.Kögler, A.Peeva, W.Anwand, P.Werner, A.B.Danilin, W.Skorupa: Solid State Phenomena, 1999, 69-70, 235-40