Infra-red and electron paramagnetic resonance studies were made of H interaction with defects in material which was implanted with protons and deuterons. An analysis of the temperature dependence of Si-H local mode anharmonicity, using isotopic substitution of H by D, revealed that the anharmonicity was sensitive to the environment of a Si-H dipole. This permitted the separation of Si-H modes between H atoms in the vicinity of vacancy or Si interstitial conglomerates, and the construction of models for H-related complexes. It was shown that the 2107, 2122/cm doublet could be attributed to V6H12. The latter could serve as the nucleus for {111} platelets.

Hydrogen Interactions with Interstitial- and Vacancy-Type Defects in Silicon S.Z.Tokmoldin, B.N.Mukashev, K.A.Abdullin, Y.V.Gorelkinskii: Physica B, 1999, 273-274, 204-7