Deep-level transient spectroscopic measurements were performed in situ on material which had been implanted with MeV ions at 85K. It was observed that the implantation of heavier ions resulted in the formation of new deep-level centres, and their formation and annealing kinetics were studied. Divacancy formation in material which was implanted with MeV Si and Ge ions was found to occur at higher temperatures than was expected on the basis of isolated vacancy mobility. It exhibited a marked dependence upon the electrical bias which was applied during annealing. The results were explained by assuming that vacancies and interstitials were trapped in clusters and disordered regions immediately after the low-temperature implantation of heavier ions. They were released during subsequent annealing.

In situ Studies of Point-Defect Complexes in Silicon Implanted with Heavy MeV Ions N.Yarykin, C.R.Cho, A.R.Zuhr, G.Rozgonyi: Physica B, 1999, 273-274, 485-8