The early stages of annealing in B-implanted material were studied. Narrow diffuse rods of intensity along <111> directions were observed in a grazing-incidence diffuse-scattering investigation of implantation-induced defects. The diffuse streaks arose from stacking faults that formed during annealing at 1000C. From the width of the diffuse streaks, the average diameter of the stacking faults was estimated to be 71nm. These intensity rods were distinct from the point defect, or point defect cluster, scattering in the tails of Bragg peaks (Huang scattering). From the q-dependence of the scattered intensity in the Huang scattering region, clear evidence was found for defect clusters with an average effective size of 4nm. This value was remarkably independent of the annealing temperature. These results were relevant to transient enhanced diffusion of implanted B.

Diffuse X-Ray Rods and Scattering from Point Defect Clusters in Ion Implanted Silicon U.Beck, T.H.Metzger, J.Peisl, J.R.Patel: Applied Physics Letters, 2000, 76[19], 2698-700