Interfacial reactions were important in microelectronic devices and could be accelerated or decelerated by imposing a direct electric current normal to the interface. These effects were analyzed by including electromigration-driven interchange of atomic species in a conventional analysis of reaction layer thickening in a binary system controlled by interdiffusion in the layer and by an interfacial reaction barrier. New types of behavior were predicted. When the electromigration augments interdiffusion, layer growth could accelerate as the layer thickens, in contrast to the usual deceleration. When the electromigration opposes interdiffusion, there was a limiting layer thickness, inversely proportional to the applied current.

Electromigration Effects on Compound Growth at Interfaces. H.T.Orchard, A.L.Greer: Applied Physics Letters, 2005, 86[23], 231906 (3pp)