Dislocation-free crystals were successfully grown from heavily B-doped melts by using the Czochralski method, but without using the Dash-neck dislocation elimination process. A dislocation-free seed of (001) orientation, with a B concentration of about 4 x 1019/cm3, was used to grow a crystal having the same B concentration. No dislocation was generated in the seed during the dipping process, and no misfit dislocation occurred in the grown crystal. The results showed that shoulder and body growth could be started immediately after seeding.

Dislocation-Free Czochralski Silicon Crystal Growth without the Dislocation-Elimination Necking Process K.Hoshikawa, X.Huang, T.Taishi, T.Kajigaya, T.Iino: Japanese Journal of Applied Physics - 2, 1999, 38[12A], L1369-71