Defects in electromagnetic Czochralski crystals were studied here for the first time by using multichroic infra-red light-scattering tomography. Dislocation lines which were located on a few crystallographic planes along various directions were observed by means of layer-by-layer tomography. Because the defect behaviour in these crystals, and the ratio of growth rate to axial temperature gradient (used to grow the crystals) were similar to those pertaining to Czochralski crystals, the defects in the present crystals were also assumed to be of interstitial-type. The latter were further assumed to agglomerate and form dislocation lines and/or dislocation clusters.

Study on Defects in EMCZ-Si Crystal by Infrared Light Scattering Tomography M.Ma, N.Nango, T.Ogawa, M.Watanabe, M.Eguchi: Journal of Crystal Growth, 2000, 208[1-4], 282-8