The X-ray diffraction topographic method was used to observe melting in situ; with particular attention being paid to the effect of dislocations upon the shape of the crystal/melt interface. In the case of low dislocation densities, melting took place uniformly and the shape of the crystal/melt interface was flat. In the case of high dislocation densities, inhomogeneous melting was observed, and the interface was not flat. The inhomogeneous melting was attributed to the existence of large numbers of dislocations which were introduced by thermal stresses.

Dislocation Effect on Crystal-Melt Interface: an in situ Observation of the Melting of Silicon Y.Wang, K.Kakimoto: Journal of Crystal Growth, 2000, 208[1-4], 303-12