An investigation was made of the effect of ultrasound upon dislocation mobility in crystals. The dislocations were introduced by scratching. It was found that ultrasound treatment resulted in changes in the dislocation displacement speed under a constant load. Application of a compressive stress made the dislocation speed slower, while a tensile stress accelerated them. Ultrasound decreased the energy of thermo-activated dislocation movement: the energy was equal to 2.03eV before treatment, and equal to 1.61eV after treatment.

Ultrasonic Influence on Dislocation Dynamics in Silicon I.V.Ostrovskii, L.P.Steblenko, A.B.Nadtochii: Solid State Phenomena, 1999, 69-70, 429-34