The pinning effect of N upon dislocations in N-doped Czochralski material was studied by means of room-temperature indentation, followed by annealing at high temperatures. The results showed that the dislocations in N-doped samples moved slower, and over shorter distances, than those in undoped material. The results indicated that the activation energy of dislocations in N-doped material was higher than that of those in undoped material.

Effects of Nitrogen on Dislocations in Silicon during Heat Treatment D.Li, D.Yang, D.Que: Physica B, 1999, 273-274, 553-6