In order to find the optimal growth and annealing conditions for high-power 650nm-band AlGaInP laser diodes, defect engineering was carried out in which the distribution and density of deep-level defects of the laser structure was analyzed. For this purpose, deep-level transient spectroscopy measurements were performed for each layer of the 650nm-band AlGaInP laser. By means of layer optimisation, using the growth and annealing conditions, the laser diode was able operate stably and kink-free at over 220mW at 70C. The characteristic temperature was 212K for 25 to 60C and 106K at above 60C.

Defect Engineering for 650nm High-Power AlGaInP Laser Diodes. D.S.Kim, K.C.Kim, Y.C.Shin, D.H.Kang, B.J.Kim, Y.M.Kim, Y.Park, T.G.Kim: Physica B, 2006, 376-377, 610-3