Dislocation filtering by interfaces between AlxIn1–xSb and AlyIn1–ySb layers grown on a GaAs (001) substrate was investigated. Transmission electron microscopy analysis showed that as many as 59% of threading dislocations could be eliminated by such an interface. An interlayer sample that contained six Al0.12In0.88Sb/Al0.24In0.76Sb interfaces had 6.0 x 108 threading dislocations/cm2 at 1.6µm thickness. Compared with an Al0.12In0.88Sb epilayer without an interlayer, this threading dislocation density was a factor of about 4 lower for the same thickness, and about the same as for a layer that was more than twice as thick. The results suggested that AlxIn1–xSb/AlyIn1–ySb interfaces could be used to improve the performance of any InSb-based device in which AlxIn1–xSb was used as a buffer, insulating, or barrier layer material.

Dislocation Filtering by AlxIn1–xSb/AlyIn1–ySb Interfaces for InSb-Based Devices Grown on GaAs (001) Substrates. T.D.Mishima, M.Edirisooriya, N.Goel, M.B.Santos: Applied Physics Letters, 2006, 88[19], 191908 (3pp)