Czochralski-type crystals were grown in 3 different cusp magnetic field configurations. The field center was positioned at the melt surface, 20mm above it or 20mm below it (the so-called surface, outside and inside configurations, respectively). The ratio of growth rate to axial temperature gradient was near to 0.07mm2/Cmin. The O concentration in the crystals was measured, but only the inside configuration yielded a uniform O distribution. For the first time, defects in the crystals were investigated by means of multichroic infra-red light-scattering tomography. The results showed that the defect density markedly decreased in going from a crystal which was grown using the outside configuration to one which was grown using the inside configuration. The intensity of the scattered light, due to defects in the crystals, exhibited a similar tendency. The defects were of interstitial type, and agglomerated to form dislocation clusters in the crystals.

Study on Defects in CZ-Si Crystals Grown under Three Different Cusp Magnetic Fields by Infrared Light Scattering Tomography M.Ma, T.Ogawa, M.Watanabe, M.Eguchi: Journal of Crystal Growth, 1999, 205[1-2], 50-8