The effect of annealing in saturated Cd vapour upon the conductivity of fine- and coarse-grained CdTe polycrystals was studied. It was shown that, prior to annealing, the carrier transport in both the fine-and coarse-grained polycrystals was determined mainly by hopping conductivity. Annealing led to a vanishing of the hopping conductivity and the emergence of a single type of defect in coarse-grained polycrystals. This defect was apparently complex but was not related to grain boundaries in any way. In fine-grained crystals, annealing led to the emergence of complex extended defects; caused either by impurity segregation at grain boundaries or by the accumulation of intrinsic defects near to these boundaries.

Charge-Carrier Transport in Annealed Coarse- and Fine-Grained CdTe Polycrystals. Y.V.Klevkov, S.A.Kolosov, A.F.Plotnikov: Semiconductors, 2006, 40[9], 1002-6