The structural, composition and optical absorption properties of Cd1-xZnxS (CdZnS) thin films fabricated by the reactive diffusion of Zn in CdS were investigated. These ternary compounds were characterized by X-ray diffraction, energy dispersive X-ray fluorescence and optical absorption measurements. It was established that thermal annealing of Zn/CdS structure at temperature (400C) lower than the melting point of Zn (418C) results in the concentration distribution of Zn in CdS film described by an erfc-curve (D = 5 x 10-14cm2/s) and characterizing the free impurity diffusion from a constant source. In contrast to this, the concentration profile of Zn in CdS film at higher annealing temperature (570C) was not described by the erfc-curve and showed a nearly stepped form, which was characteristic of reactive diffusion. X-ray diffraction patterns of Zn/CdS structures annealed at 570C showed diffraction peaks of ternary CdZnS compounds. Analysis of the absorption spectrum of such films indicated formation of CdZnS composition with the largest value of energy band gap up to 2.64eV, exceeding the band gap of CdS (2.43eV). It was concluded that interdiffusion in Zn/CdS structures at temperatures exceeding the melting point of Zn was accompanied by formation of Cd1-xZnxS ternary compounds. The band gap of this variable band structure changes from 2.64eV in the near surface region to 2.43eV (CdS) in the inner region of the film.

Formation of CdZnS Thin Films by Zn Diffusion. T.D.Dzhafarov, F.Ongul, I.Karabay: Journal of Physics D, 2006, 39, 3221-5