The impurity-defect system in the Cd1−xZnxTe crystals (0.02 ≤ x ≤ 0.15) was analyzed prior to and after heat treatment at 720 to 1170K. It was found that the conductivity in most of these crystals was governed by 2 types of acceptor, A1 (E V = 0.03–0.05 eV) and A2 (EV = 0.12 to 0.15eV). The variation in electrical properties of the crystals after heat treatment depends on the concentration of background impurities in the starting material and the degree of compensation of acceptor A1. An increase in the resistivity and homogeneity of the samples was observed after 2 sequential heat treatments.

Variation in Electrical Properties of the Cd1-xZnxTe Crystals as a Result of Heat Treatment. E.S.Nikoniuk, Z.I.Zakharuk, E.V.Rybak, S.G.Dremlyuzhenko, V.L.Schlyakhovyi, M.A.Kovalets: Semiconductors, 2006, 40[7], 781-4