An investigation was made of the interaction of Si interstitial atoms, during the thermal oxidation of Si, with a dislocation loop layer that was positioned at various distances from the surface. A study was also made of the interaction between 2 loop layers that were positioned at various depths. In both cases, interstitials were injected by surface oxidation. The results revealed a linear dependence of the injection flux of interstitials upon the inverse of the distance of the loop layer from the surface. A small (16%) leakage of injected interstitials escaped from the upper loop layer and became bounded to the deeper loop layer.

Investigation of the Interaction between Silicon Interstitials and Dislocation Loops using the Wafer Bonding Technique D.Tsoukalas, D.Skarlatos, J.Stoemenos: Journal of Applied Physics, 2000, 87[12], 8380-4