An optically-detected magnetic resonance study of Ga(Al)NAs alloys grown by molecular beam epitaxy on GaAs substrates was presented. A number of grown-in defects were observed which act as non-radiative recombination centres. A detailed analysis of experimental data using a spin Hamiltonian leads to the identification of two Gai defects. A comparison with similar defects in other phosphide-based diluted nitride III-V compounds, such as GaAlNP and GaInNP, permitted additional information about the nearest surrounding of the defects to be obtained. Possible models for other defects observed during the experiments were also considered.

Optically Detected Magnetic Resonance Studies of Point Defects in Ga(Al)NAs. I.P.Vorona, T.Mchedlidze, D.Dagnelund, I.A.Buyanova, W.M.Chen, K.Köhler: Physical Review B, 2006, 73[12], 125204 (6pp)