It was recalled that bulk GaAs and InP crystals with diameters of up to more than 10cm could now be grown which had very low dislocation densities; (EPD considerably below 1000/cm2) by using the vertical gradient freeze growth technique and rigorous process optimization by the aid of numerical simulation. It turns out that the usually dominating 60°-dislocations were no longer the dominating type if the dislocation density was in therange where the etch-pit density was 100/cm2 or below. It was noted that the goal of growing large dislocation-free GaAs and InP crystals like Si could be attained only if the types of so-called residual dislocations were identified and their origins fully understood. A review was presented of current knowledge concerning these residual dislocations in GaAs and InP with various dopants.

Types and Origin of Dislocations in Large GaAs and InP Bulk Crystals with Very Low Dislocation Densities. G.Müller, P.Schwesig, B.Birkmann, J.Härtwig, S.Eichler: Physica Status Solidi A, 2005, 202[15], 2870-9