The diffusion of Fe, Cu, and Cr transition-metal impurities in heavily-doped p+-, n+- and intrinsic (at the diffusion temperature) GaAs was studied. A technique was used in which the impurity was diffused into GaAs-based structures with heavily doped layers (p+-n or n+-n). It was shown that the impurity diffusivity values in p+-GaAs and n+-GaAs were significantly higher and lower, respectively, than those for i-GaAs. The results obtained were analyzed; taking into account the effect of the electron-hole equilibrium shift in semiconductors upon the diffusion of impurities migrating via the dissociative mechanism. The interstitial-component concentration for Fe, Cu and Cr impurities in GaAs was determined at the diffusion temperature.

Influence of the Electron-Hole Equilibrium Shift on Transition-Metal Diffusion in GaAs. S.S.Khludkov: Semiconductors, 2006, 40[8], 869-74