Elementary surface processes occurring during phase-phase epitaxy of the III–V compounds were studied using experimental and calculation methods. The calculated phase-phase composition in the reactor and the adsorption layer composition on the growth surface were compared with the experimental data on the surface structure and electrophysical properties of GaAs layers doped with Zn and Te. This allowed the characteristic quantities of surface processes such as average diffusion length and surface diffusion coefficient for host-material (for GaAs, InAs, and InP) and impurity (Zn, Te) atoms to be estimated.

Theoretical and Experimental Study of Surface Processes during Vapor-Phase Epitaxy of III–V Compounds. I.A.Bobrovnikova, I.V.Ivonin, S.E.Toropov: Russian Physics Journal, 2006, 49[5], 455-60