An investigation was made of dislocations and electrical properties in InSb thin films with various thickness grown on GaAs(001). It was found that both the threading dislocation density and the local donor concentration decrease in proportion to the inverse of the distance from the InSb/GaAs interface, which indicated that the former was the origin of the latter. This behavior was well explained by pair annihilation mechanism of the threading dislocations. The electron mobility was limited by ionized donor scattering, i.e. charged dislocation scattering.

Dislocation-Limited Electron Transport in InSb Grown on GaAs(001). T.Sato, T.Suzuki, S.Tomiya, S.Yamada: Physica B, 2006, 376-377, 579-82