Data were presented on the mechanical stress, σ, which developed in the diffusion zone of single crystals for various dislocation densities and relationships between the concentrations of As and Ga vacancies. The results were analyzed in terms of impurity diffusion through Ga, As and interstitial sites. The influence of the defect system upon σ was shown to depend upon the mechanism of impurity diffusion. A correction coefficient which eliminated the discrepancy between the experimental stress data and the theoretical predictions was determined for various diffusion mechanisms.

Influence of Structural Defects on the Mechanical Stress in the Impurity Diffusion Zone of GaAs Single Crystals. M.B.Litvinova, A.D.Shtanko: Inorganic Materials, 2005, 41[8], 789-92