It was rcalled that most III–V compound semiconductor nanowires, seeded by metal particles, grew preferentially in a <111>B direction (B wires) and, most commonly, with many stacking faults situated perpendicularly to the growth direction. If growth proceeded in an alternative direction, defect-free growth was observed. Experimental results were presented for the growth of GaAs nanowires in a previously uninvestigated growth direction: a <111>A direction (A wires). One novelty noted was that a {111}A growth plane, like a {111}B, was a close-packed plane on which the stacking sequence could be interrupted to form stacking faults but, unlike the B wires, the A wires lacked stacking faults. It was also observed that, when prepared under equivalent conditions, the growth rate of the A wires was approximately twice that of the B wires. In addition, the B wires had an hexagonal cross-section with three {112} and three {¯1¯12} side-facets. The A wires, on the other hand, had only 3 major side-facets which were of {112}-type; giving them a triangular cross-section.

Growth and Characterization of Defect-Free GaAs Nanowires. B.A.Wacaser, K.Deppert, L.S.Karlsson, L.Samuelson, W.Seifert: Journal of Crystal Growth, 2006, 287[2], 504-8