A model was presented which permitted, for the first time, a quantitative description of electron beam induced current data - for various dislocation states - as a function of temperature. The model assumed the existence of shallow dislocation energy bands which were caused by the strain field, and/or stacking fault bounded by partials, plus deep electronic levels which were caused by metal impurity atoms in the vicinity of the dislocation core; and by core defects. The model coupled recombination, at shallow dislocation levels, to the extrinsic deep levels which surrounded it. It was supposed that deep levels in the vicinity of the dislocation could capture not only free electrons and holes from the conduction and valence bands, but also carriers from the shallow dislocation bands, via tunnelling.

Temperature Dependence of the Recombination Activity at Contaminated Dislocations in Si - a Model Describing the Different EBIC Contrast Behaviours M.Kittler, V.V.Kveder, W.Schröter: Solid State Phenomena, 1999, 69-70, 417-22