Thin GaN films were grown on N+-ion-implanted single-crystal GaAs(111) substrates by radical-beam gettering epitaxy, and their structural perfection was assessed by high-resolution X-ray diffraction. At growth temperatures of 770 to 970K, the layers consist of hexagonal GaN and had mirror-smooth surfaces. Nitrogen-ion implantation into the substrate favours the formation of a sharp film/substrate interface owing to radiation-enhanced gallium diffusion. Analysis of the GaN/GaAs structures by Auger electron and X-ray photoelectron spectroscopy in combination with depth profiling indicated that the GaN layer was enriched in gallium. The N: Ga atomic ratio in the films was 0.98: 1, which was attributable to radiation-enhanced gallium diffusion.

Radical-Beam Gettering Epitaxy of GaN Layers on Nitrogen-Ion-Implanted GaAs Substrates. A.N.Georgobiani, I.V.Rogozin, M.B.Kotlyarevsky: Inorganic Materials, 2006, 42[8], 830-4