Wafers with a normal light-emitting diode structure were grown by using the metal-organic chemical vapours phase deposition method. The pressure and temperature were varied during growth of the buffer layer in order to grow differing types of epilayer. The cathodoluminescence results showed that the interface distortion of quantum well played an important role in radiant efficiency. The electroluminescence results indicated that the dislocations also influenced the external quantum efficiency by lowering the electron injection efficiency.

Defect Influence on Luminescence Efficiency of GaN-Based LEDs. S.Li, Z.Fang, H.Chen, J.Li, X.Chen, X.Yuan, T.Sekiguchi, Q.Wang, J.Kang: Materials Science in Semiconductor Processing, 2006, 9[1-3], 371-4