The partial dislocations in wurtzite-structured GaN were reviewed and new results were presented. It was found that a multiplicity of partials was possible, depending upon the stacking-fault type, orientation and interactions. The partials which delimited the I1 intrinsic basal stacking faults had 5/7, 8 or 12-atom cores as the more probable configurations. The core structures of 90° partial dislocations with a 1/6<20▪3> Burgers vector were deduced from high-resolution transmission electron microscopic observations and compared with simulated models which were based upon energetic calculations. Two cases were distinguished, with one structure involving a 5/7 or 12-atom ring core and the other involving an 8-atom ring core. Another type of partial, in particular dislocations which accommodated mirror variants of basal stacking faults, was also studied experimentally.

Partial Dislocations in Wurtzite GaN. P.Komninou, J.Kioseoglou, G.P.Dimitrakopulos, T.Kehagias, T.Karakostas: Physica Status Solidi A, 2005, 202[15], 2888-99