In the framework of ab initio tight-binding methods, the atomic and electronic core structures of the c-edge basal dislocation in wurtzite GaN was modelled. It was found that this dislocation had 4 core configurations; displaying 5/8/5- or 4/8-atom rings structures. All of these configurations induce unfilled deep states in the top half of the band gap.

Ab initio Tight-Binding Study of the Core Structures of the c-Edge Dislocation in Wurtzite GaN. I.Belabbas, J.Chen, M.Akli Belkhir, P.Ruterana, G.Nouet: Physica Status Solidi A, 2006, 203[9], 2167-71