Transmission electron microscopic observations was performed for anti-surfactant treated GaN layers in order to clarify the annihilation process for dislocations. The morphology of dislocations in 3 dimensions was analyzed in a stereographic manner by using high-voltage transmission electron microscopy. It was revealed that most of the threading dislocations were laid down on the anti-surfactant treated surface and merged with one another to form a network of dislocations (sweep-up process). The dislocations then decreased in number, after merging, via cancellation of their Burgers’ vectors. It was also revealed that a thin layer was formed on the anti-surfactant treated surface. The layer was confirmed to be crystalline.

TEM Analysis of Annihilation Process of Threading Dislocations in GaN Thin Films Grown by MOVPE with Anti-Surfactant Treatment. M.Hijikuro, N.Kuwano, M.Takeuchi, Y.Aoyagi: Physica Status Solidi C, 2006, 3[6], 1832-5