It was recalled that implantation and plasma in-diffusion of H into crystalline samples produced planar defects (platelets) whose structure was unclear. Extensive first-principles calculations were performed here which revealed mechanisms for the nucleation and growth of aggregates of second-nearest neighbor hydrogenated vacancies. These defects exhibited the key features which were associated with platelets; including a preference for (111) and (100) planes, H release, and trapping of H2 molecules.

Theory of the Nucleation, Growth and Structure of H-Induced Extended Defects in Silicon F.A.Reboredo, M.Ferconi, S.T.Pantelides: Physical Review Letters, 1999, 82[24], 4870-3