A dislocation structure was studied in Ge single crystals grown in a regime of minimum temperature gradients at the crystallization front and low supercooling. The investigations showed that the distortion of the flat crystallization front arising during crystal droplet detachment in the completion growth stage results in the dislocation generation in the lower parts of dislocation-free single crystals. The dislocations were generated at the phase boundary and propagate in the thermoplasticity zone.

Dislocation Generation in Dislocation-Free Germanium. Y.Smirnov, I.Kaplunov, A.Dolmatov: Russian Physics Journal, 2005, 48[5], 460-4